Rhoderick, metalsemiconductor contacts, clarendon, oxford, 1978. Rhoderick clarendon press oxford wikipedia citation please see wikipedias template documentation for further citation fields that may be required. It is observed that the zerobias barrier height decreases and ideality factor n increase with a decrease in temperature, this behaviour is attributed to barrier inhomogeneities by assuming gaussian distribution at the interface. Annealing causes the silicide to be formed over the source, drain, and gate. A fundamental study of advanced metalsemiconductor contacts. Topics covered include the factors that determine the height of the schottky barrier, its currentvoltage characteristics, and its capacitance. Metalsemiconductor contact properties of alcoiicomplex compounds article in microelectronic engineering 881. This book deals with the basic science of such contacts, and discusses the electrical properties that are relevant to semiconductor technology. A short discussion is also given of practical contacts and their application in semiconductor technology, and a. There are two types of metalsemiconductor contacts, ohmic and schottky rectifying contacts.
For example, good ohmic contacts are essential for achieving excellent performance of a semiconductor device, while schottky i. There is no interdiffusion or intermixing of the metal and the semiconductor. Rhoderick, metalsemiconductor contacts, clarendon press, oxford 1978. To include a comma in your tag, surround the tag with double quotes. Metalsemiconductor ms contacts are an essential part of virtually all semi conductor electronic and. It is well known that the quality of metal semiconductor contacts plays an important role in the performance of various semiconductor devices and integrated circuits.
A metal semiconductor junction results in an ohmic contact i. Pdf metal contacts to gallium nitride researchgate. Practical metalsemiconductor contacts do not always appear to obey the schottky limit. Based metalinsulatorsemiconductor diodes caltech thesis. Pdf an accurate way of determining the series resistance rs of schottky barrier diodes. This second edition brings a greatly expanded treatment of the physics of schottkybarrier formation to its comprehensive discussion of modern semiconductor technology.
There are no adsorbed impurities or surface charges at the ms interface. It is well known that the quality of metalsemiconductor contacts plays an important role in the performance of various semiconductor devices and integrated circuits. In such case, the carriers are free to flow in or out of the semiconductor so that there is a minimal resistance across the contact. Metalsemiconductor contacts fermi level pinning is the lack of barrier height modulation with metal work function due to either large density of intrinsic states. It is well known that the quality of metalsemiconductor contacts plays an. This second edition brings a greatly expanded treatment of the physics of schottkybarrier formation to its comprehensive discussion of modern. In modern semiconductor technology, contacts between semiconducting devices and the metal conductors that connect them with the rest of the system are of fundamental importance. Our knowledge of metalsemiconductor diodes goes back more than a.
The barrier heights and ideality factors of schottky contact are found in the range 0. Pdf series resistance calculation for the metalinsulator. Metalsemiconductor contact properties of alcoiicomplex. A short discussion is also given of practical contacts and their application in semiconductor. Topics covered include the currentvoltage relationship, the capacitance of rectifying contacts, and practical methods of fabricating contacts. The metal and semiconductor are in intimate contact on the atomic scale with no layers of any type between the components. Pdf we report measurements on the nature of aluminum and gold contacts to gan. For example, good ohmic contacts are essential for achieving excellent electrical characteristics of a semiconductor device, while schottky i.
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